STMicroelectronics Inc. (Switzerland) unveiled its 3A, 600V IGBT that combines a low on-voltage drop (VCEsat), a low gate charge and an integrated freewheeling diode in a compact DPAK form factor The STGD3NB60SD transistor has a VCEsat of 1.1V at 3A, a total gate charge of 18nC on a double die assembly, and a compact surface-mount DPAK (TO-252) package, according to the company.
STMicroelectronics claims that the transistor is particularly suitable for cutting the cost of high-efficiency, high-intensity gas-discharge lamps for the automotive motor market and for motor control and other low-power (about 100W) bridge applications operating at frequencies of less than 1KHz.
