STMicroelectronics (Switzerland) has introduced the first in a family of high-gain bipolar power transistors that feature low saturation voltage. The new STT818A/B device is suitable for use in low-voltage switching applications.
The STT818A/B high-gain PNP power transistor, using an inter-digitated layout, harnesses low-voltage epitaxial planar technology. It exhibits a typical collector-emitter saturation voltage of 0.25V.
The STT818A/B high-gain PNP power transistor comes in a SOT-23-6L package, in a tape-and-reel format. It is currently available for $0.18 in 3,000-unit quantities.