Siliconix Inc. (Santa Clara, CA), a subsidiary of Vishay Intertechnology Inc. (Malvern, PA), announced a new family of p-channel MOSFETs targeted for automotive 12 V, board-net, high-side switches and electric motor drives. The -40 V and -60 V devices reduce MOSFET on-resistance to record-low levels. Maximum on-resistance ratings range from 15 milliohms to 4.2 milliohms for the six devices.
Since p-channel MOSFETs require no additional high-side driver circuitry for turn-on, the -40 V and -60 V TrenchFET devices help to reduce component count and improve reliability in automotive and industrial systems compared with n-channel solutions. When used to replace previous-generation, p-channel devices, the new TrenchFETs lower system power consumption as well. Package options for the -40 V devices are the standard DPAK (SUD50P04-09L); the thermally enhanced D2PAK (SUM110P04-04L); and the lead-less, 1.07 mm high PowerPAK SO-8 (Si7463DP). The -60 V TrenchFETs are also offered in the DPAK (SUD50P06-15L); the thermally enhanced D2PAK (SUM110P06-07L); and the PowerPAK SO-8 (Si7463DP). The DPAK and D2PAK devices are rated for a maximum junction temperature of 175 °C, while the PowerPAK SO-8 TrenchFETs are rated for up to 150 °C.
Samples and production quantities of the new p-channel TrenchFET power MOSFETS are available now with lead times of 10 to 12 weeks for larger orders. Pricing starts at $1.10 in 100,000-piece quantities.