Siliconix Announces New SUB50N04-07T Power MOSFET

Siliconix Inc. (Santa Clara, CA) announced its new SUB50N04-07T temperature-sensing power MOSFET. Intended for power switching and other applications where temperature sensing is required such as motor control, solenoid drivers and relay replacements, the new device will give automotive and industrial designers a simple means of increasing protection to power circuitry from current overloads and excessive temperatures.

According to the company, the new MOSFET offers the lowest on-resistance for any temperature-protected power MOSFET in a D2PAK at 7.5 milliohms at a 10V gate drive. Integrating a power MOSFET on the same chip as two back-to-back poly-silicon diodes, the SUB50N04-07LT is rated for a 40V breakdown voltage and can handle up to 50A of current. The SUB50N04-07T provides a 175-degrees C maximum junction temperature, ensuring reliability in the harsh automotive environment.

Samples and production quantities of the SUB50N04-07T are available now, with lead times of four to six weeks for larger orders. Pricing for US delivery in 100,000-piece quantities is $1.42.