Sensitron Semiconductor (Deer Park, NY) announced it has developed a new 200V Silicon Schottky die with nearly ideal forward and reverse characteristics. The PtSi barrier diodes are fabricated by using a unique simultaneous diffusion and reaction technique. A 125 x 125 sq. mil. Die typically has Ir=80nA at Tj=25 degrees C and Ir=1.8mA at Tj=175 degrees C, both at If=15A.