ROHM Introduces ECOMOS Series To Handle Reduced Supply Voltages in Portables

ROHM Semiconductor introduced its new ECOMOS™ series of P-channel and N-channel MOSFETs which are designed to meet the prescribed operation at lower gate drive voltages that emerging generations of portable electronic devices require. ROHM’s advanced proprietary processing has produced devices that exhibit R_DS(ON) values said to be as much as 90% lower than comparable devices when operated at ultra-low 1.5 or 1.2V gate drive (VGS) voltages. This improved electrical performance combined with ROHM’s unique packaging design provides both high-efficiency, excellent power dissipation and small device footprint.

The new ECOMOS 1.5V products are offered in three package sizes, depending on maximum power dissipation (PD), in configurations that include single P-channel or N-channel devices (with or without Schottky barrier diode) and complex, multi-die dual P-channel or N-channel devices. The three package sizes with salient specifications are: WEMT6: 1.8 x 1.6 x 0.8mm (1613), PD(MAX) = 0.8 W; TSST8: 3.0 x 1.9 x 0.8 mm (3016), PD(MAX) = 1.25 W; and TSMT8: 3.0 x 2.8 x 0.8 mm (3024), PD(MAX) = 1.5 W.

ROHM Semiconductor’s Field Application Engineering Manager, Kevin Turchin, commented, "As a leader in semiconductor fabrication technology, ROHM Semiconductor designs and manufactures our own equipment and processes. The advanced fabrication techniques we developed for ECOMOS have resulted in dramatic improvement in R_DS(ON), particularly when low gate drive voltages are required. This process has also yielded parts with reduced die size, which makes it possible to offer devices in smaller, lower-profile packages."

The units are priced at US$0.16-0.46 (small OEM quantities) with a delivery of 12 weeks ARO.