Free Download: Highly Efficient, and Compact ZVS Resonant Full Bridge Converter Using 1200V SiC MOSFETs

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In this Cree white paper, a 1200V, 160mohm SiC MOSFET from Cree is used to design a high-frequency Zero Voltage Switching (ZVS) LLC resonant full-bridge (FB) DC/DC converter. With the outstanding advantages of SiC MOSFETs, which has lower junction capacitance and low-on-state resistor compared to a silicon (Si) device, the resonant converter can achieve a high-frequency and high-efficiency, thus increasing the power density with fewer components and reducing total cost. An 8kW prototype is developed to demonstrate how the SiC MOSFET can help achieve the highest performance for a soft-switching DC/DC converter with the maximum efficiency measured at 98.3 percent. These types of converters can be commonly used in three-phase industrial power supply applications. These include telecom or server power converters, high-voltage DC (HVDC) systems, inductive heating or electric vehicle (EV) chargers. (registration required)

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