Philips Semiconductors (Eindhoven, the Netherlands) announced a new dual n-channel MOSFET in an SO8 package, the PHKD6N02LT. It is a 2.5V specified enhancement-mode field-effect transistor within a plastic package using TrenchMOS technology. The PHKD6N02LT is designed for
battery-protection circuits. It is suitable for use in lithium-ion battery applications, notebook PCs and portable appliances.
The features and benefits of the PHKD6N02LT include a dual-channel that enables
lower BOM, a smaller package that allows more components in a limited board area, and a lower profile to simplify compact design.