Panasonic Corporation will showcase its GaN and SiC power devices and related products at booth 913 of the Applied Power Electronics Conference 2019 in Anaheim, California from March 17 to 21, 2019.
Panasonic’s products and solutions that are based on the gallium nitride (GaN) and silicon carbide (SiC) feature low-loss characteristics that surpass the physical limitations of the existing material Si (silicon).
Panasonic’s Exhibitor Seminar titled, “X-GaN Power Transistor Breakdown Mechanisms,” will be held on March 19 at 3:00 p.m. to 3:25 p.m. at the Anaheim Convention Center, Session Room 303AB.
Key solutions on exhibit
X-GaNTM power devices, X-GaN solutions
By employing a proprietary structure, Panasonic’s 600V GaN power device, X-GaN has achieved normally-off and current collapse free characteristics, thereby enabling a size reduction and improving the efficiency of power conversion systems. Panasonic will also showcase industrial subsystems that can take full advantage of the X-GaN’s high performance, as well as application demos and an evaluation kit for checking the X-GaN performance.
SiC-DioMOS devices, SiC modules
Panasonic’s proprietary DioMOS (Diode-integrated MOSFET) structure enables a size reduction of SiC modules with the addition of free-wheel diode functionality, which is necessary for power supplies and inverters, and transistors. At APEC 2019, Panasonic will introduce SiC-DioMOS-related solutions.
GaN bidirectional switches (reference exhibit)
The company provides a new GaN bidirectional switch with an innovative device structure that is capable of bidirectional switching and single directional current conduction as well as high voltage isolation.
Panasonic will also exhibit small DBM (Drive-by-Microwave) isolated gate drivers that can drive this GaN bidirectional switch. Because this GaN bidirectional switch can significantly reduce conduction losses and the number of elements for this switching system, it contributes to the downsizing and higher conversion efficiency of power converter circuits.