Alpha and Omega Semiconductor Limited (AOS) has introduced AONR21357, the initial product in this P-Channel family. The new AONR21357 uses the improved P-Channel MOSFET process to achieve low power loss and reliable startup.
The new device rated at -30V drain-source breakdown voltage (BVDss) and -25V gate-source voltage. It features a maximum on-resistance (RDS(ON)) of 12.3mohm under VGS = -4.5V, and a thermally enhanced 3x3mm DFN package. The new P-Channel MOSFET is ideal for load switch applications in Notebook Adapter-In/ Battery In sockets.
USB Type-C is becoming the de-facto interface for the latest PCs and mobile designs. With that, the USB-PD standard is implemented to cover various power delivery requirements for many portable devices. The load switch circuit is used to switch on/off the power bus according to the power management proxy.
The new MOSFET used as the load switch offers extended input/output voltage range, and is robust and reliable enough to accommodate the possible working conditions. AOS’ enhanced P-Channel technology offers robustness toward linear mode operation, and low Miller’s Plateau (<3.5V) to cover the possible USB-PD voltages.
‟The AONR21357 comprehensively addresses the need for -30VDS and -25VGS discrete P-Channel MOSFET. High performance such as low Miller Plateau and low loss of turn-on switching behaviors ensures reliable and secure safe operation area, allowing designers to take advantage of simple design with P-Channel MOSFETs,” said Rack Tsai, Director of Marketing for low voltage MOSFET product line in AOS.
The AONR21357 is immediately available in production quantities with a lead-time of 12 weeks. The unit price of 1,000 pieces is $0.60.
