ON Semiconductor will launch and exhibit a new SiC-based hybrid IGBT and associated isolated high-current IGBT gate driver at the PCIM Europe 2019 Exhibition and Conference in Nuremberg beginning May 7. The AFGHL50T65SQDC uses the company’s latest field stop IGBT and SiC Schottky diode technology to deliver low conduction and switching losses in multiple power applications, including those that benefit from reduced reverse recovery losses, such as totem pole-based bridgeless power factor correction (PFC) and inverters.
Typical applications of the 650V SiC-based hybrid IGBT include, automotive, PFC, industrial inverters, on-board chargers, and dc-dc converters.
The device combines a silicon-based IGBT with a SiC Schottky barrier diode. This combination results in an outstanding tradeoff between the lower performance of silicon-based solutions and the higher cost of entirely SiC-based solutions.
The device is rated for 650V operation and can handle continuous currents up to 100A @ 25°C (50A @ 100°C) as well as pulsed currents up to 200A. For systems requiring higher current capabilities, a positive temperature coefficient allows for simple and convenient parallel operation.
In addition to using energy to travel, modern electric vehicle applications can in some cases store energy that may be used to power the home during peak grid-use periods. Such dual use requires a bi-directional charger with high-efficiency switching to make certain that energy is not wasted during the transfer. In this use case, the IGBT with external SiC diode is significantly more efficient than a MOSFET solution. It eliminates associated forward or reverse recovery losses.
The AFGHL50T65SQDC can operate with junction temperatures as high as 175°C, making it suitable for the most challenging power applications, including automotive. It is fully AEC-Q101 qualified and is therefore suitable for use in onboard EV and HEV chargers.
Features of AFGHL50T65SQDC
- AEC−Q101 Qualified
- Maximum Junction Temperature : TJ = 175°C
- Positive Temperature Co−efficient for Easy Parallel Operating
- High Current Capability
- Low Saturation Voltage: VCE(sat) = 1.6V (Typ.) @IC = 50A
- Fast Switching
- Tighten Parameter Distribution
- No Reverse Recovery/No Forward Recovery
New Range of Isolated, High-Current IGBT Drivers
Alongside the new hybrid IGBT, ON Semiconductor will also release and showcase a new range of isolated, high-current IGBT drivers at PCIM. The NCD(V)57000 series targets multiple power applications including motor drives, solar inverters, UPS, and automotive applications such as powertrain and PTC heaters.
The NCD(V)57000 series are high-current single channel IGBT drivers with internal galvanic safety isolation designed to provide highly efficient operation in power applications that stipulate high reliability. The devices feature complementary inputs, open drain fault, and ready outputs, an active Miller clamp, accurate under-voltage lockout (UVLO), and DESAT protection with soft turn off, as well as negative gate voltage pin and separate high and low driver outputs.
The galvanic isolation is rated at greater than 5kVrms which meets the requirements of UL1577. The working voltage is greater than 1200V, and the devices guarantee 8mm creepage distance (input > output) to meet reinforced safety isolation requirements.
NCD(V)57000 devices can source 7.8A drive current and sink 7.1A, which ON Semiconductor says is more than three times the capability of some competing devices. More importantly, they also have a higher current capability while operating in the Miller plateau. When this higher current capability is combined with their advanced protection features, it makes them best-in-class IGBT drivers, the company says.
Features of NCD57000
- High Current Output(+4A/-6A) at IGBT Miller Plateau Voltages
- Short Propagation Delays with Accurate Matching
- DESAT with Soft Turn Off
- Active Miller Clamp and Negative Gate Voltage
- High Transient & Electromagnetic Immunity
- 5kV Galvanic Isolation
Benefits of NCD57000
- Improves system efficiency
- Improves PWM signal integrity
- Protection against overload and short circuits
- Prevents spurious gate turn-on
- Ruggedness in fast slew rate high voltage and high current switching applications
- Galvanic isolation to separate high voltage and low voltage sides to provide safety and protection