NXP Semiconductors N.V. has introduced the first transistors in a 1.1-mm x 1-mm x 0.37-mm low-profile DFN (discrete flat no-leads) package. The new portfolio consists of 25 types including low RDSon MOSFETs, as well as low saturation and general purpose transistors that boost current capabilities up to 3.2A. The ultra-small form factor and high performance make the new product families suited for power management and load switches in portable and space-constrained applications where size, power density and efficiency are important considerations.
"Achieving this high value for drain and collector current in such a small plastic package is unprecedented," said Joachim Stange, product manager, transistors, NXP Semiconductors. "With this milestone, NXP continues to push the envelope in ultra-compact packaging and performance in MOSFETs and bipolar transistors."
The new product series is available in two package versions: the single-die DFN1010D-3 (SOT1215) package with a power dissipation capability of 1 W comes with the special feature of tin-plated, solderable side pads. These side pads meet strict automotive requirements by offering the advantage of optical soldering inspection, as well as a better quality of solder connection compared to conventional leadless packages. The dual-die package DFN1010B-6 (SOT1216) with the 1.1-mm footprint is the smallest package available for dual transistors.
The products in DFN1010 can replace many WL-CSP devices, as well as larger DFN and standard leaded SMD packages such as SOT23 which is eight times the size, while delivering equivalent or even better performance. Additional features of the new portfolio include: RDSon values down to 34mOhm; Voltage range of 12 V to 80 V; ESD protection of 1 kV; Single low VCEsat (BISS) transistors; Low VCEsat values down to 70 mV; Collector current (IC) up to 2 A, Peak collector current (ICM) up to 3 A; VCEO of 30 V and 60 V; and AEC-Q101 qualification. The new transistors in DFN1010 are available immediately in high-volume production.