Nexperia announced its lowest-ever RDS(on) from the company’s NextPower S3 MOSFETs in Trench 11 technology that it achieved without compromising other important parameters such as drain current (ID(max)), Safe Operating Area (SOA) or gate charge QG. Nexperia’s PSMNR58-30YLH MOSFET with a maximum RDS(on) of 0.67mΩ, improves the maximum drain current rating up to 380A.
The low RDS(on) makes the MOSFETs suitable for brushless dc (BLDC) motor control (full bridge, 3-Phase topologies); server power for ORing, hot-swap operation, and synchronous rectification; battery protection; and mobile fast-charge and dc load switch. Other potential uses include e-fuses and synchronous rectification in ac-dc and dc-dc applications.
Many applications require very low RDS(on) such as those listed above to reduce I²R losses and increase efficiency.
However, the company points out that some competing devices that manage to achieve similar RDS(on) values suffer from reduced SOA – a measure of the ruggedness of the MOSFET – and reduced ID(max)) ratings due to shrinking cell-pitches.
Drain current is especially important in motor control applications in which motor-stall can result in very high current surges for short periods that the MOSFET must withstand for safe and reliable operation. Some competitors provide only computed ID(max) whereas Nexperia demonstrates continuous current capability up to 380A, and 100% final production test at up to 190A.
Nexperia offers devices in both LFPAK56 (Power-SO8) and LFPAK33 (Power33) packages that provide unique copper-clip construction which the company says absorbs thermal stresses, increasing quality, and improving reliability. The PSMNR58-30YLH comes in LFPAK56, Nexperia’s 4-pin Power-SO8 with a footprint of 30mm2 and a pitch of just 1.27mm.
“The combination of our unique NextPowerS3 superjunction technology and the LFPAK package has enabled Nexperia to deliver low RDS(on) MOSFETs with a high ID(max) rating that do not compromise the SOA rating, quality or reliability. This makes the new parts uniquely positioned for high performance, high reliability and fault-tolerant applications,” comments Steven Waterhouse, product manager for Power MOSFETs at Nexperia.
- 100% avalanche tested at I(as) = 190A
- Optimized for low RDS(on)
- Low leakage < 1µA at 25°C
- Low spiking and ringing for low EMI designs
- Optimized for 4.5V gate drive
- Copper-clip for low parasitic inductance and resistance
- High-reliability LFPAK package, qualified to 175°C
- Wave solderable; exposed leads for optimal solder coverage and visual solder inspection