The Semiconductor Division of Mitsubishi Electric and Electronics USA Inc. (Philadelphia) introduced two new gallium arsenide (GaAs), hetero-structure, field-effect transistor (HFET) products. At 24W, the MGFK44A4045 device delivers a high output power device in the 14.0GHz to 14.5GHz range. The MGFK41A4045 device offers a 12W output at 14.0GHz to 14.5GHz.
The devices' high output power is made possible through Mitsubishi Electric's HFET technology, which improves on conventional metal schottky FET technology by offering high breakdown-voltage characteristics and higher uniformity in volume production. As a result, the devices can be fabricated on larger dies, thereby enabling customers to design smaller and lighter power amplifiers while lowering their design and manufacturing costs.
The MGFK44A4045 and MGFK41A4045 GaAs FETs are available in hermetically sealed, metal-ceramic packages that occupy a 24mm x 17.4mm x 4.7mm (K44A), 21mm x 12.9mm x 4.5mm (K41A) footprint. Samples of both devices are available now, with volume production scheduled for August 2003 for the K41A and September 2003 for the K44A. Sample pricing is $750 each for the MGFK44A4045 device and $450 each for the MGFK41A4045 device.
