New Industry Products

Mitel Intros 1.2-kV trench IGBT

August 22, 1999 by Jeff Shepard

Mitel Semiconductor (formerly GTEC Plessey Semiconductor, Lincoln, UK) has developed a 1.2-kV trench IGBT with an on-resistance of 1.1V for non-irradiated devices and 2.1V for irradiated devices. These 25A punch-through devices were fabricated based on stripe and hexagonal geometries. The trench width versus trench spacing of these devices was optimized to obtain minimum on-resistance without compromising switching performance. The resulting on-resistances (1.1V and 2.1V) are near those of GTO thyristors and superior to those of state-of-the-art DMOS IGBT structures in the same voltage class. In addition, these trench devices offer latch-up free operation and high maximum controllable current density capability. Mitel is now developing commercial products based on this new technology. The new trench IGBTs will be specifically targeted at high-voltage, high-power applications such as motor drives and large UPSs currently served by power diodes and GTO thyristors.