IXYS Corp. (Santa Clara, CA) introduced three new trench power MOSFETs for low-voltage, high-current applications. The IXUC100N055, IXUC200N055 and IXUC160N075 possess high current ratings of 100A, 200A and 160A, respectively.
The devices are housed in a new "hole-less" package that conforms to the TO-220 outline with an electrically isolated mounting tab. In this ISOPLUS220 housing, the standard copper lead frame has been replaced by direct-copper-bonded alumina. The elimination of the screw hole makes room for larger trench power MOSFET dice, which can carry higher currents than possible using the regular TO-220 package, and result in 2,500Vrms isolation, lower temperature rise, better power cycling and smaller size. The maximum operating junction temperature rating is 175 degrees C. UL recognition is pending.
The 75V IXUC160N075 MOSFET features a low RDS(on) of 6.5 milliohms and a QG(on) of 250nC. The 55V IXUC100N055 and IXUC200N055 have an RDS(on) of 7.7 and 4 milliohms and a QG(on) of 100nC and 200nC, respectively. The three MOSFETs will find use in high-power dc/dc converters, battery back-up UPS systems, future automobiles with 42V batteries, telecommunication systems, motion controls, high-power dc/dc converters, dc motor controls, heaters, inverters for ac motors, solar-powered inverters, and battery chargers.
Deliveries of sample quantities are from stock with production quantities available in 8 to 12 weeks.