IXYS Corp. (Santa Clara, CA) introduced the new IXTP01N100D and IXTP02N50D high-voltage, depletion-mode MOSFETs that are normally on at 0V gate bias and which require a negative gate bias to block current. Applications for the MOSFETs include level shifters, current regulators, solid-state relays, inrush current limiting, offline linear regulators and input transient-voltage suppressors.
The IXTP01N100D has a 1kV, 100mA rating, with a drain-source on-resistance of 110 ohms. The IXTD02N50D is rated at 500V, 200mA, and exhibits an on-resistance of 30 ohms. The required gate bias for turn-off is specified at -5V.
The devices are housed in TO-220 packages allowing for high-power dissipation of 25W at 25 degrees C. Pricing, in 1,000-unit quantities, is $0.97 for the IXTP01N100D and $0.86 for the IXTP02N50D.
