IXYS Corp. (Santa Clara, CA) is offering an expanded range of 1,200V MOSFETs, which can provide greater safety margin and improved reliability in high-voltage power conversion applications. The family includes a number of small, economical sizes, as well as the industry's highest current, rugged HiPerFET™ versions in the high-power SOT-227 package.
The family of high-voltage MOSFETs will compliment IXYS' other high-voltage lines, finding applications in a diverse range of products such as switching power supplies (flyback and other topologies), electronic lamp starters, lamp ballasts, high-voltage gradient amplifiers, induction heating equipment, and battery chargers for telecommunications.
IXYS' HiPerFET technology provides additional dV/dt capability, and includes an intrinsic fast-recovery diode. The devices reduce the recovery time of the body diode to 250 nanoseconds or less, even at elevated temperatures. The dV/dt withstand capability of the HiPerFETs offer significant safety margins for the stresses encountered in high-voltage switching applications.
The 3A, 1,200V-rated, IXTP3N120 offered in the TO-220 package is available in high volumes and replaces similar components; the HiPerFET offered in the large, high-performance SOT-227 package is currently available in sample quantities.
