International Rectifier Corp. (IR, El Segundo, CA) introduced three new high-current HEXFET power MOSFETs that handle up to 100 percent more current and up to 50 percent lower device on-resistance than competing devices in the same footprint.
The high-current, high-efficiency 150V and 200V devices enable up to 25 degrees C lower operating temperature than previous-generation devices. Lower device operating temperatures increase power-to-size ratio, or power density, and increase reliability.
The new MOSFETs are optimized for the primary side of 48V isolated dc-to-dc converters.
Jorge Llorens, IR marketing manager for networking and communication products, stated, "Faster microprocessor speed and wider bandwidth pushes power density and reliability requirements to higher levels. IR's new high-current HEXFET MOSFETs reduce or eliminate the need to parallel multiple devices, resulting in simpler designs, smaller size and lower parts count."
The new devices include the 200V, 94A IRFBA90N20D in a Super-220 package; the 200V, 94A IRFP90N20D in a TO-247 package; and the 150V, 61A IRFB61N15D in a TO-220 package.
The new IRFBA90N20D, IRFP90N20D and the IRFB61N15D are available now. Pricing in 10,000-unit quantities is $1.19 each for the IRFB61N15D, $2.90 each for the IRFBA90N20D and $3.00 each for the IRFP90N20D.
