International Rectifier Corp. (IR, El Segundo, CA) introduced new radiation-hardened (RAD-Hard™) logic-level gate drive MOSFETs designed to boost efficiency and performance in circuits that traditionally relied on bipolar transistors. The general-purpose, low-power switching devices are made for harsh environments.
Compared to 2N2222A and 2N2907A bipolar transistors, the new IRHLUB7970Z4 and IRHLUB770Z4 RAD-Hard MOSFETs require less energy, switch faster and feature a lower on-state resistance. Packaged in a UB (3LCC) surface-mount or through-hole package, they are a compact, lightweight, hermetic alternative to bipolar devices.
The IRHLUB7970Z4 and IRHLUB770Z4 can be driven directly from industry-standard logic gates, linear ICs or micro-controllers that operate from a low-voltage source of 3.3 V to 5 V. They are available in screened and commercial off-the-shelf (COTS) versions.
The new MOSFETs are available now. Pricing for the IRHLUB7970Z4 and IRHLUB770Z4 begins at $80.00 each, both in 500-unit quantities.