IR Intros IRF7811W, IRF7822 HEXFET Power MOSFETs

International Rectifier (IR, El Segundo, CA) has introduced two new HEXFET power MOSFETs, the IRF7811W and the IRF7822. IR claims that these new MOSFETs deliver up to a three percent increase in efficiency in buck and isolated dc/dc topologies. The MOSFETs are manufactured using a new stripe trench process.

“The advantage of the new process is the decoupling of device on-resistance and capacitance, parameters that are historically a trade-off in power MOSFETs. As a result, devices with both extremely low device on-resistance and very low gate charge are now possible, the best of both worlds," commented Carl Blake, IR's technical marketing manager. He continued, “In these high-current buck converter topologies, the IRF7811W control FET and the IRF7822 synchronous FET can decrease parts count from 25 to 50 percent while maintaining the same efficiency level, compared to the industry-best solution. The performance advantage of these parts can be used to run dc/dc converters at a lower temperature or increase power density in the same form-factor."

Production quantities for the new IRF7811W and IRF7822 MOSFETs will be available in February, 2001. Pricing begins at $1.27 each in 10,000 unit quantities.