IR Intros IRF7341Q/7314Q/7103Q Automotive MOSFETs

International Rectifier Corp. (IR, El Segundo, CA) introduced its new IRF7341Q, IRF7314Q and IRF7103Q dual-HEXFET MOSFETs in the SO-8 package rated for repetitive avalanche up to a maximum junction temperature of 175 degrees C. The new MOSFETs save up to 70 percent space and are designed for automotive power systems and other low-current applications.

The new devices are the first dual-MOSFETs in the SO-8 package that are Q101-qualified with a maximum junction temperature of 175 degrees C, compared to the 150 degrees C currently available for surface-mount packages. The devices offer a repetitive avalanche rating up to the maximum junction temperature.

The new devices are available immediately. Pricing begins at $0.37 each in 10,000-unit quantities for the IRF7103Q.