International Rectifier (IR, El Segundo, CA) announces 10 additions to their SOIC HEXFET power MOSFET product range. These new devices, targeted primarily at load and battery management applications, are claimed to show improvements of up to 80 percent over the previous industry best for low Rds(on). The silicon for these new SOIC devices is based on IR's trench HEXFET technology platform, which is claimed to deliver the highest cell density of any trench technology in production today. IR is also introducing a new package style, the TSOP-6. This package has the same footprint and outline as the existing Micro6, but is designed to offer a 24 percent lower profile. IR claims that other packaging styles have also been improved. The Micro3 (also known as SOT-23), for instance, can now accommodate 50 percent more silicon without impacting reliability. This increase is claimed to have facilitated a 90 percent reduction in Rds(on) in the Micro3 footprint, compared to previous offerings from IR. All of the new SOIC devices are currently available in production quantities. Pricing starts at $0.14 each for 100,000 part lots.