International Rectifier Corp. (IR, El Segundo, CA) introduced the new 100V, IRFB4710 and IRFS4710 HEXFET power MOSFETs that increase power density in 48V input, half- or full-bridge topologies used in the high-performance dc/dc converters required for telecom and datacom equipment.
The new IRFB4710 is rated at 75A in the TO-220 package, or 30 percent higher current than previous generation devices, allowing designers to shrink the size, weight and cost of power supplies by paralleling fewer devices to achieve desired current ratings.
The new IRFB4710 and IRFS4710 MOSFETs have a 40 percent lower on-resistance than previously available devices, resulting in higher efficiency and lower operating temperature. In-circuit testing shows that four IRFB4710s run 20 degrees C cooler at 350W compared to industry-standard devices, according to IR. The new devices offer the opportunity to reduce heatsink size and cooling cost.
Jorge Llorens, IR marketing manager for netcom/datacom products, dc/dc sector, said, "The new IRFB4710 MOSFET offers a new alternative to designers of high-performance telecom/datacom dc/dc power systems. The IRFB4710 device can be used to shrink power supply size, weight and cost by increasing the power density in watts per cubic inch. The IRFB4710 can also be used to increase reliability by reducing power supply temperature. International Rectifier once again is proving its commitment to the telecommunication and data communication industry by providing leading-edge technology."
The IRFS4710 MOSFET, in a D2Pak package, is optimized for 100W to 300W, board-mounted power systems. The IRFB4710, in a TO-220 package, is designed for 3kW to 5kW shoe-box-type power supplies used in wireless base stations.
Pricing for the new family begins at $0.90 each. The devices are available immediately.
