International Rectifier Corp. (IR, El Segundo, CA) introduced a new 600V HEXFET power MOSFET family with fast body diode characteristics tailored for soft-switching applications such as the zero voltage switching (ZVS) circuits. ZVS is a technique used to maximize efficiency and enable higher power output in switch-mode power supply circuits in high-speed, broad bandwidth, telecommunications and data communications systems where efficiency and reliability is of the greatest importance.
The fast body diode characteristic in the L Series eliminates the need for additional Schottky and HV diodes in ZVS circuits, reducing component count and shrinking space. The new devices enhance system reliability since the internal body diode is active and carries current for a portion of the duty cycle, unlike bridge or power-factor correction circuits where the devices are usually hard-switched. The turn-on losses are virtually eliminated in ZVS power supply designs by turning on the MOSFET when its integral body diode is conducting.
The maximum reverse-recovery time for the body diodes in the L Series devices is less than 250ns, and even shorter for lower-current devices. The lower reverse-recovery period ensures that the integral body diode is completely recovered from a conduction state to a blocking state before a high voltage is applied to the device during turn-off operation.
The new 600V HEXFET power MOSFETs with fast body diodes are available immediately. Pricing begins at $1.59 each for the IRFB16N60L in 10,000-unit quantities.
