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Imec and Veeco to Collaborate on Production of GaN-on-Si Devices

September 02, 2013 by Jeff Shepard

Veeco Instruments Inc. and Imec International are collaborating on a project aimed at lowering the cost of producing gallium-nitride-on-silicon (GaN-on-Si) -based power devices and LEDs. Imec's multi-partner GaN-on-Si research and development program gathers the industry to jointly develop world-class GaN LED and power devices on 200-mm silicon substrates compatible with a 200-mm CMOS-compatible infrastructure. By joining forces at Imec, companies share costs, talent and intellectual property to develop advanced technologies and bring them to the market faster.

Barun Dutta, Imec's Chief Scientist, commented, "The productivity, repeatability, uniformity and crystal quality of Veeco's metal organic chemical vapor deposition (MOCVD) equipment has been instrumental in helping us meet our development milestones on GaN-on-Si for power and LED applications. The device performance enabled by the epi has helped us realize state-of-the-art D-mode (depletion mode) and E-mode (enhancement mode) power devices. Our goal is to establish an entire manufacturing infrastructure that allows GaN-on-Si to be a competitive technology."

Jim Jenson, Senior Vice President, General Manager, Veeco MOCVD, commented, "We have been working with Imec on this program since 2011 and are encouraged by our progress. Our work is mutually rewarding, as we are both focused on being able to realize lower costs while maintaining world-class performance on GaN-on-Si devices. This technology can be used to create lower cost LEDs that enable solid state lighting, more efficient power devices for applications such as power supplies and adapters, PV inverters for solar panels, and power conversion for electric vehicles."

Veeco's MOCVD equipment features excellent film quality and low defects, which are key for effective GaN-on-Si processing. It also incorporates Veeco's Uniform FlowFlange technology for superior uniformity and excellent run-to-run repeatability. Low maintenance TurboDisc technology enables highest system availability, excellent particle performance and high throughput.