Hitachi Ltd. (Japan) announced the company's eighth-generation, n-channel HAT2164H power MOSFETs manufactured on a 0.35µm process and featuring reduced cell sizes by up to 70 percent and on-resistance by up to 45 percent. Suitable for use in dc/dc converters found in routers, servers and notebook PCs, the MOSFETs offer a 4.5V drive capability at a drain-source breakdown voltage of 30V.
The HAT2164H offers an on-resistance of 3 milliohms at a Vgs of 4.5V — 40 percent lower than previous products — and further reduces it to 2.5 milliohms at a Vgs of 10V. The HAT2165H achieves the figure-of-merit (FOM) of on-resistance by a gate-drain charge of 37 milliohms nC at a Vgs of 4.5V — 45 percent lower than the company's earlier products. At a Vgs of 10V, the device attains an FOM of 28.5 millohms nC.
Both MOSFETs are packaged in the company's surface-mount, LFPAK package, which occupies the same footprint as an SOP-8 casing.
