HexaTech Launches 2” Diameter Aluminum-Nitride Substrate Product Line
HexaTech Inc. announced today the launch of its 2" diameter aluminum-nitride (AlN) substrate product line. HexaTech is launching this milestone product in conjunction with this week's International Conference on UV LED Technologies & Applications (ICULTA-2018) in Berlin, Germany.
Without the use of AlN, device manufacturers are relegated to building AlGaN-based devices on sub-optimal substrates such as sapphire or silicon-carbide (SiC), and therefore are forced to implement exotic, and sometimes expensive fabrication techniques to compensate for the mismatch in materials.
From a market perspective, this alternative approach has been both disappointing and predictable; devices riddled with defects that don't meet the performance or reliability needs of the customer.
By manufacturing devices directly on native AlN substrates, HexaTech's process shows 10,000 to 1,000,000 times fewer defects than the next best technologies. HexaTech's high quality substrates translate to devices with superior performance, reliability and production yields.
"This achievement is the result of our intense, focused research and development activities, producing critical breakthroughs in AlN crystal growth performance," noted John Goehrke, HexaTech CEO.
Goehrke added, "Together with strong support from our strategic partners, including OSRAM as announced last year, we have again raised the bar for AlN substrate technology, enabling world-leading value for world-leading device performance."
Gregory Mills, VP of Business Development for HexaTech emphasized, "This capability is the leading edge of a long-term, production-oriented product portfolio, which will enable our customers to quickly and easily transition deep-ultraviolet (UV-C) optoelectronic/electronic device development and production to an AlN substrate platform, delivering superior device performance coupled with cost-effective production scaling, process integration, and accelerated time to market."
"By challenging perceived constraints and aggressively pursuing solutions at each step of the crystal growth process, we have developed a significant shift in capability which breaks previously observed limitations," stated Dr. Raoul Schlesser, HexaTech co-founder and VP of Crystal and Wafer Development.
"An outstanding team effort is responsible for this milestone, and sets the stage for both continued diameter expansion and increased process yields, ultimately rivaling the price:performance ratio of other mature compound semiconductor technologies, such as SiC and GaAs," Dr. Schlesser concluded.
HexaTech's 2" diameter substrates are available with standard lead times.
