HexaTech Achieves Defect-Free 2” Diameter Aluminum Nitride Substrate

HexaTech, Inc. announced today the first known demonstration of a defect-free 2" diameter aluminum nitride (AlN) substrate. HexaTech attained this milestone in performance as part of its highly focused research and development program, combined with the direct support of its strategic business partners.

HexaTech co-founder and CTO, Dr. Raoul Schlesser commented, "This is the largest known single crystal AlN substrate that is completely free of macroscopic defects, and accomplishes a long-standing goal as part of our 2" product development.  Full-substrate reflection X-ray topography confirms this achievement, which will support and accelerate commercial production of high quality 2" material."

"Less than a year from our first 2" demonstration, reaching this level of perfection is a testament to the efforts of the entire HexaTech team, and highlights our relentless drive to provide our customers the ultimate in AlN substrate performance," stated HexaTech CEO, John Goehrke.

"This capability establishes a new baseline for sustaining our vision of continued diameter expansion and greater market adoption," Goehrke added.

HexaTech's 2" diameter substrates, in addition to 35 mm and 25 mm substrates, are available now with standard lead times.