General Semiconductor Inc. (Melville, NY) announced that the company has developed power MOSFETs with a new silicon process utilizing 200 million cell-per-square-inch technology. This new generation of GenFET yields a four-fold improvement over the current cell density, and will be suitable for use in cellular phones, notebook computer and other wireless electronic equipment.
The new generation of GenFET will be manufactured using General Semiconductor's 0.35 micrometer trench process, which results in a specific Rds(on) of 0.41 milliohms per centimeter squared for a 30V p-channel device. This technology improves the existing on-resistance times gate-charge figure by approximately 60 percent.
"This technology breakthrough attests to our commitment to deliver state-of-the-art MOSFETs to our customer base," commented Ronald A. Ostertag. "Our continued investment in our proprietary trench technology allows us to provide more efficient devices in smaller packages, which helps extend battery life in today's portable and wireless devices."
Initial samples of the new GenFET MOSFETs in six-leaded SOT-23 and SOT-363 packages will be available by the end of the second quarter of 2001, with full production expected to begin in the summer of 2001.