PowerPulse.net
Automotive Electronics

GaN Systems Targets Module Makers with 150A and 80A Power Transistors in Die Form

GaN Systems has announced the industry’s highest current 650V GaN E-HEMTs with the addition of the 150A, 650V (GS-065-150-1-D, pictured above) and the 80A, 650V (GS-065-080-1-D) to its line of GaN power transistors.

In particular, the 150A, 650V transistor is unmatched on both current (80A at 22mΩ) and resistance (50A at 18mΩ) than any other GaN power transistor in the market. The Introduction of 150A and 80A, 650V GaN E-HEMT transistors is intended to meet the growing markets for EVs, energy storage, and industrial motors.

These products meet today’s high-power system requirements to achieve higher operating currents, higher efficiency, and smaller size and weight. The transistors, developed specifically for automotive, industrial, and renewable energy industries, feature the highest current GaN in production.

Targeted applications include:

  • Traction inverters (75kW to 150kW) and onboard chargers (6.6kW to 22kW range) in electric vehicles
  • Energy storage systems and solar/PV inverters up to 50kW+
  • Industrial motor drives and controllers up to 10kW+

The products are sold in a die form factor targeted for various power module topologies.

GS-065-080-1-D

Customers use the die in modules to create half-bridge, full-bridge, and six pack configurations to create optimized high-power designs with integrated gate drive circuits to differentiate their end customer solutions.

“The increasing complexity and performance demands of power systems have created the need for higher performance GaN solutions. Our family of innovative and unprecedented transistors are growing to meet the overwhelming requirements from our customers and partners for high-performance GaN-based technology,” stated Jim Witham, CEO of GaN Systems.

“Module companies can now offer the industry’s best GaN E-HEMTs in high power modules allowing OEMs and Tier 1 suppliers to focus on implementing highly efficient power electronics using GaN with ease and confidence,” concluded Witham.