Shunfeng International Clean Energy Limited (SFCE or the company) today announced that its subsidiary, Lattice Power Corporation, has won the first prize of the National Science and Technology Invention Award for the “High Efficacy GaN-on-Si Blue LED” technology that was jointly developed by Lattice Power, Nanchang University, CECEP Lattice Lighting Co., Ltd. and the China Energy Conservation and Environmental Protection Group.
“Currently there are three LED technology paths in the LED lighting industry sapphire substrate, silicon carbide substrate and silicon substrate,” said Eric Luo, SFCE’s executive director and CEO. “While the first two of these technologies have already been monopolized in the US and Japan, after a decade of research and development, the silicon substrate technology has finally been patented and commercialized by Lattice Power in China. I would like to congratulate Professor Fengyi Jiang, Dr. Qian Sun, Dr. Min Wang and their team at Lattice Power for achieving this impressive technological breakthrough and winning this award.”
Silicon substrate LED technology benefits from good thermal conductivity, low-cost materials as well as competitive wafer sizes, which enables lighting products to be manufactured at lower cost, with higher power and better directivity. Compared to sapphire substrate and silicon carbide substrate technologies, the silicon substrate technology can be applied to a wider range of applications including residential lighting, commercial lighting, landscape lighting and automotive lighting.
Professor Fengyi Jiang and Dr. Min Wang co-founded Lattice Power with the goal of commercializing silicon substrate LED lighting technology in 2006. Lattice Power subsequently completed four rounds of fund-raising from GSR Ventures, Temasek Holdings, IFC and APAC Resources Limited, respectively. In May 2015, SFCE acquired a 59% equity stake in Lattice Power as an important part of its low-carbon, integrated, clean energy platform.