New Industry Products

Fairchild Semiconductor Introduces FQNL1/FQNL2N50B MOSFETs

August 13, 2001 by Jeff Shepard

Fairchild Semiconductor (CITY) introduced the new FQNL1N50B and FQNL2N50B TO-92L packaged, n-channel MOSFETs employing QFET technology. They are designed to provide improved performance in compact ballast applications, and deliver lower cost compared to I-PAK MOSFETs.

The devices are fabricated using Fairchild’s proprietary planar stripe, DMOS technology and boast a figure of merit that is 40 percent lower than the published specifications of I-PAK MOSFET devices.

These MOSFETs are also designed to minimize on-state resistance, provide high switching performance, and withstand high-energy pulses in the avalanche and commutation modes. The FQNL1N50B features a 9ohm on-resistance and 500V, 0.27A ratings. The FQNL2N50B exhibits a 5.3ohm on-resistance and 500V, 0.35A ratings. Both are also rated at 1.5W.

In 1,000-unit quantities, pricing is $0.30 each for the FQNL1N50B and $0.35 each for the FQNL2N50B.