Fairchild Semiconductor announced its new MicroFET products. The FDMA1027, a 20V P-Channel PowerTrench® MOSFET, and the FDFMA2P853, a 20V P-Channel PowerTrench MOSFET with a Schottky diode, are housed in 2 x 2 x 0.55mm MLP packages. They are said to be 55% smaller and 50% lower in height than 3mm x 3mm x 1.1mm MOSFETs that are typically used in low-voltage designs. This thin package option is said to satisfy the requirements for ultra-slim form factors associated with next generation portable products such as cell phones.
The FDMA1027 and the FDFMA2P853 are designed for greater efficiency, addressing the power challenges of feature-rich functionalities that tax battery life. Utilizing Fairchild’s proprietary PowerTrench® MOSFET process that reduces conduction and switching losses, these devices are said to offer excellent power dissipation and low conduction losses. According to the company, compared to similar sized devices housed in 2 x 2mm SC-70 packaging, the FDMA1027PT and the FDFMA2P853T offer approximately 60% lower conduction losses and are able to dissipate 1.4W of power, compared to 300mW with SC-70 packages.
Fairchild’s MicroFET family is said to offer compelling advantages such as compact packaging and high performance to address the needs of battery-charging, load-switching, boost and dc-dc conversion.
The FDMA1027 and the FDFMA2P853 utilize lead-free (Pb-free) terminals and have been characterized for moisture sensitivity in accordance with the Pb-free reflow requirements of the joint IPC/JEDEC standard J-STD-020.
The units are priced (each, 1000 pieces) at US $0.57, with a delivery of 8 weeks ARO.