Fairchild Semiconductor International (San Jose, CA) has successfully qualified its line of new medium-voltage (60V to 150V) UltraFET Trench MOSFET technology for automotive applications, according to the internationally accepted AEC Q101 standard. The first in the series are the FDB045AN08A0, FDP047AN08A0 and the FDD16AN08A0. The devices are designed for high-current, automotive, 42V applications such as starters/alternators, electronic power steering, electric braking, valve timing and dc/dc conversion.
The new medium-voltage devices are suitable for high-power applications. Typically, in many of the new automotive applications, several devices must be paralleled to achieve a very low overall switch resistance. However, because of the low gate charge of UltraFET MOSFETs, the required drive current, and therefore the size of the drive circuitry, is limited. For example, the FDB045AN08A0 features a total gate charge of 138nC, combined with an ultra-low RDS(on) (4.5 milliohms maximum at room temperature in the TO-263). For inductive load switching, the device has an unclamped inductive surge capability for single and repetitive pulses (600mJ at 50A).
Available now, pricing in 1,000-piece quantities range from $1.65 to $3.80 ($1.65 for the FDD16AN08A0, $3.80 for the FDB045AN08A0 and $3.80 for the FDP047AN08A0).
