Batteries and Portable Power

Efficient Power Conversion – Readers’ Choice Company of the Year

Efficient Power Conversion Corp (EPC) has captured the title “Readers’ Choice Company of the Year.” This selection is based on EPC’s domination of the 50 most-read product news stories for 2015. EPC products account 8 of the top 50 product stories for 2015 (as measured by readership). This is the first time that a single company has accounted for such a large number of product news stories (that amounts to 2 per quarter), including 1 in the Top 10 and 5 in the Top 20. Congratulations to the EPC team for this impressive accomplishment.

In addition to a large volume of product introductions, EPC was busy in the areas of business and market development in 2015. In February EPC and its founder Alex Lidow were the focus on an article in Bloomberg Business. In March, the company published its Wireless Power Handbook. In May, EPC announced its collaboration with Integrated Device Technologies (IDT) to integrate GaN and SiC devices. The IDT collaboration followed the March announcement that EPC had partnered with Texas Instruments on the development of an 80-V Half-Bridge GaN FET Module.

In June at the PCIM Europe Conference, a paper titled “Enhancement Mode Gallium Nitride Transistor Reliability” was presented by EPC's Alex Lidow, Rob Strittmatter, Chunhua Zhou, and Yanping Ma. Among other findings, the paper points out that, "Under both HTRB and HTGB type stress conditions, the MTTF well exceeds 10 years at maximum operating temperature and at both VDSmax and VGSmax." The developments continued throughout the year, and in December, it was announced that Nick Cataldo had joined the EPC leadership team as senior vice president of global sales and marketing.

The following are the EPC new product stories in the PowerPulse 2015 Top 50 along with their rankings:

#7 EPC eGaN Power Transistors Break Silicon Cost-Speed Barriers

Efficient Power Conversion Corporation (EPC) announces the 60V EPC2035 and 100V EPC2036 eGaN power transistors designed to compete in price, while outperforming silicon. Price, the last major barrier to widespread adoption of GaN transistors as silicon MOSFET replacements, has fallen. These products demonstrate that gallium nitride can displace silicon semiconductors and drive the industry back onto the Moore’s Law growth curve. more

#11 Small eGaN FET has Low Price for HF Switching

Efficient Power Conversion Corporation (EPC) announces the EPC2039 power transistor, a high power density enhancement-mode gallium nitride (eGaN®) device. The EPC2039 is an extremely small, 1.82mm2, 80VDS, 6.8A power transistor with a maximum RDS(on) of 22 milliohms with 5V applied to the gate. This GaN power transistor delivers high performance in power conversion systems due to its high switching capabilities in a very small package. more

#15 TI and EPC Partner on 80-V Half-Bridge GaN FET Module

Texas Instruments, Inc. (TI) today introduced the industry’s first 80-V, 10-A integrated gallium-nitride (GaN) FET power-stage prototype, which consists of a high-frequency driver and two GaN FETs in a half-bridge configuration all in an easy-to-design quad flat no-leads (QFN) package. TI has an arranged supplier agreement with Efficient Power Conversion Corp. (EPC) for GaN FETs the LMG5200 is a combination of TI’s optimized driver and EPC’s GaN combined in a high performance package to maximize performance and efficiency. more

#18 GaN Power Integrated Circuit for Wireless Power Transfer

Efficient Power Conversion Corp. (EPC) announces the EPC2107 (100V) and EPC2108 (60V) eGaN® half-bridge power integrated circuits with integrated bootstrap FET, eliminating gate driver induced reverse recovery loses as well as the need for a high-side clamp. This is the first time that a bootstrap FET has been integrated in an eGaN power circuit. more

#20 97% Efficient 48V-to-12V POL with Monolithic GaN Half-Bridge

Efficient Power Conversion Corp. (EPC) announces the EPC2104, 100-V enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN® power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated, resulting in a 50% reduction in board area occupied by the transistors. This increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the end user’s power conversion system. more

#39 7 milliOhm 200V and 5 milliOhm 150V GaN Transistors

Efficient Power Conversion Corporation (EPC) announces the introduction of two eGaN FETs that raise the bar for power conversion performance. These products have a maximum operating temperature of 150 degrees C and pulsed currents capabilities of 260A (150 V EPC2033) and 140A (EPC2034). Applications include dc-dc converters, synchronous rectification in dc-dc and ac-dc converters, motor drives, LED lighting, and industrial automation. more

#41 2MHz Monolithic GaN Half Bridge targets Class-D Audio

Efficient Power Conversion Corp. (EPC) announces the EPC2106, an enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN® power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated. This increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the end user’s power conversion system. more

#48 Wide-Pitch eGaN FETs Enable High Current in Small Footprint

Efficient Power Conversion Corporation (EPC) announces the introduction of an eGaN® FET designed with a wider pitch connection layout. The first in a new family of “Relaxed Pitch” devices, the EPC2029 80 V, 31 A eGaN FET features a 1 mm ball pitch. The wider pitch allows for placement of additional and larger vias under the device to enable high current carrying capability despite the extremely small 2.6 mm x 4.6 mm footprint. more

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