Development Boards with 200V eGaN FETs Operate to 30 MHz

Providing an easy-to-use way for power systems designers to evaluate the exceptional performance of gallium nitride transistors and get their products into volume production quickly, Efficient Power Conversion Corporation (EPC) announces high efficiency, GaN-based differential mode development boards that can operate up to 30MHz.

These development boards are designed for class-E applications, such as wireless charging, but can be used for any application where a low-side switch is utilized. Examples include, but are not limited to, push-pull converters, current-mode class-D amplifiers, common source bi-directional switch, and generic high voltage narrow pulse width applications such as LiDAR.

These development boards feature 200V rated eGaN® FETs. The amplifiers are set to operate in differential mode and can be re-configured to operate in single-ended mode and include the gate driver and logic supply regulator.

All three boards have common preference specifications. The operating load conditions, including configuration, determine the optimal design load voltage and resistance. The device parameters for each board are: EPC9052 development board with EPC2012C GaN FET rated for 200V (Vds, max.), 100mΩ (Rds(on), max.), 85pF (Coss, max.) and 22A (pulsed Id, max.); EPC9053 development board with EPC2019 GaN FET rated for 200V (Vds, max.), 50mΩ (Rds(on), max.), 150pF (Coss, max.) and 42A (pulsed Id, max.); and the EPC9054 development board with the EPC2010C GaN FET rated for 200V (Vds, max.), 25mΩ (Rds(on), max.), 320pF (Coss, max.) and 90A (pulsed Id, max.).

The EPC9052/9053/9054 are priced at $158.13 each and are available for immediate delivery from Digi-Key

Efficient Power Conversion Corporation
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