Cree Expands Zero Recovery Diode Product Family

Cree Inc. (Durham, NC) announced the addition of two new silicon carbide (SiC) Zero Recovery™ Schottky diodes to its power device product family - a 300 V diode in both 10 A and 20 A versions, and a 1,200 V diode in 10 A and 20 A versions. The devices are offered in industry-standard TO-220 and TO-247 packages.

Target applications for the 300 V devices include output rectifiers and power-factor correction in power supplies, and applications for the 1,200 V devices include use as anti-parallel diodes for high-frequency inverters and snubber diodes for high-current IGBT inverters. The new SiC Schottky diodes offer the same benefits as Cree’s other SiC rectifiers, including faster switching speeds, reductions in circuit size and complexity, and a higher power density yield for compact power supplies in high-performance applications.