Common-Drain Dual N-Channel 60V MOSFET Increases Power Density and Efficiency
Vishay Intertechnology, Inc. introduced a new common-drain dual n-channel 60V MOSFET in the compact, thermally enhanced PowerPAK® 1212-8SCD package. Designed to increase power density and efficiency in battery management systems, plug-in and wireless chargers, dc-dc converters, and ac-dc power supplies, the Vishay Siliconix SiSF20DN offers the industry's lowest RS-S(on) in a 60V common-drain device.
The dual MOSFET released today provides RS-S(on) down to 10mΩ typical at 10V, the lowest among 60V devices in the 3mm by 3mm footprint. This value also represents a 42.5% improvement over the next best solution in this footprint size and is 89% lower than Vishay's previous-generation devices.
The result is reduced voltage drops across the power path and minimized power losses for increased efficiency. For higher power density, the SiSF20DN's RS1S2(on) times area is 46.6% lower than the next best alternative MOSFET, even when including larger 6mm by 5mm solutions.
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To save PCB space, reduce component counts, and simplify designs, the device uses an optimized package construction with two monolithically integrated TrenchFET® Gen IV n channel MOSFETs in a common drain configuration. The SiSF20DN's source contacts are placed side by side, with enlarged connections increasing the contact area with the PCB and reducing resistivity further compared to conventional dual package types.
This design makes the MOSFET well-suited for bidirectional switching in 24V systems and industrial applications, including factory automation, power tools, drones, motor drives, white goods, robotics, security/surveillance, and smoke alarms.
The SiSF20DN is 100% Rg- and UIS-tested, RoHS-compliant, and halogen-free.
Samples and production quantities of the new MOSFET are available now, with lead times of 30 weeks for larger orders. Pricing for U.S. delivery only starts at $0.86 per piece in 10,000-piece quantities.
