Cissoid and IEE/CAS Partner on SiC Power Module Development for EVs
Cissoid reported that it established a strategic partnership with the Institute of Electrical Engineering of Chinese Academy of Sciences (IEE/CAS) to develop systems based on SiC power modules. They intend to use SiC power solutions to overcome technical issues and implement the advantages of SiC power devices such as high-temperature resistance, high-voltage resistance, high-energy density, and high efficiency. The cooperation is expected to promote the broad range of SiC power device applications in what Cissoid refers to as “new energy vehicles.”
Cissoid notes that in recent years, SiC power devices have steadily replaced traditional silicon devices in some fields with their performance advantages. The company says that at the same time, new energy vehicles are increasingly being adopted around the world, driving the continued expansion of the SiC device market.
Top OEMs such as Tesla and Toyota have begun the early adoption of SiC power devices.
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However, in automotive applications, Cissoid points out that SiC devices need the full support of drivers for high-temperature resistance and demanding protection mechanisms to fully exert their advantages.
Based in Belgium, Cissoid offers a portfolio of components and drivers that have been proven in demanding fields such as aviation and aerospace, petroleum and automotive. According to Cissoid, their components and drivers enable SiC power modules to fully release their performance in the systems, helping new energy vehicles increase their operating power levels and driving mileage.
IEE/CAS is a national research institution focused on electrical science and engineering.
Cissoid sited the findings of Yole Development, which reported that in the past few decades, the average Tj (junction temperature) of power semiconductors has continuously risen because of market demands, technical advancement, design improvement, and other factors. It has increased from 100℃ in 1980 to 150℃ in 2018.
On the one hand, this increasing junction temperature shows that the quality and reliability of power devices steadily improving, and it also reflects the industry’s continuing pursuit of high power density.
According to Yole’s prediction, the requirement on Tj of power semiconductors will reach and exceed 175℃ in a few years. This Tj increase is directly related to the popularity of third-generation semiconductor power devices (SiC and GaN) and the market demands for high power density designs.
Cissoid says the same is true for new energy vehicles, noting that the adoption of SiC devices can provide advantages such as high frequency and low internal resistance, and improved energy efficiency.
However, Cissoid points out that the increasing adoption of SiC devices in new energy vehicles requires good cooperation from high-temperature resistant drivers.
Cissoid also says that this alliance with IEE/CAS will leverage the high-temperature resistance drivers to take advantage of SiC power devices, significantly boosting the development of new energy vehicles.