Eos Corp. (Camarillo, CA) introduced eight new single-output versions of its V-Series VLT60 and VLT100 open-frame ac/dc switching power systems. The power supplies, intended for use in a variety of electronic products that connect to the Internet, including data networking and telecommunications equipment, are claimed to be the smallest and most efficient devices in their […]
Elna Co. (Japan) has reportedly developed a compact, high-capacity, high-output capacitor for use in electric and hybrid-electric vehicles. The capacitor measures 35mm x 50Mm and boasts a charge/discharge outptu of 100A.
IRC Inc. (Corpus Christi, TX) is employing its thick film-on-aluminum technology to manufacture electronic circuits with high-thermal transfer characteristics. The company claims...
Tyco Electronics Power Systems (Mesquite, TX) recently debuted the Galaxy Power System (GPS) 4848/100. Suitable for a wide variety of -48Vdc applications, the GPS 4848/100 meets power requirements ranging from 200 to 10,000A. The system operates directly from commercial power in 380/400/480Vac or 208/220/240Vac. It combines switch-mode rectifiers with dc distribution and battery connections and […]
Sensitron Semiconductor (Deer Park, NY) announced it has developed a new 200V Silicon Schottky die with nearly ideal forward and reverse characteristics. The PtSi barrier diodes are fabricated by using a unique simultaneous diffusion and reaction technique. A 125 x 125 sq. mil. Die typically has Ir=80nA at Tj=25 degrees C and Ir=1.8mA at Tj=175 […]
International Rectifier (IR, El Segundo, CA) introduced the IR2157 600V Resonant Mode Controller IC, which is designed to act as the core...
International Power Sources Inc. (IPS, Holliston, MA) announced the new IA Series, a line of miniature board-mount dc/dc converters. The new devices...
The ML4803 from Micro Linear Corp. (San Jose, CA) is claimed to be the industry's smallest power supply chip to combine both power factor correction and pulse width modulation. According to Micro Linear, the ML4803 uses a multi-patented new architecture that reduces the cost of power supplies by cutting the pin count in half while […]
Advanced Power Technology (APT, Bend, OR) introduced a new family of power MOSFETs in hermetic packages. According to APT, the new MOSFETs can be provided with commercial or TX processing, and custom device screening and testing is available. The devices, which are all avalanche energy rated, are available in the TO-254, TO-258, TO-3 and TO-267 […]
STMicroelectronics Inc. (Lexington, MA) introduced the new STTHxx03 Series of high-frequency rectifiers, which are optimized for use on the secondary side of telecom power supplies, where voltage spikes in the 250-280V range are often experienced. According to ST, the new devices retain the performance of their 200V BYW family and are built with a new […]
Microelectronic Modules Corp. (New Berlin, WI) offers the MM5030 Series of 10A non-isolated, board-level dc/dc converters in an industry-standard 6A SIP. The company claims that the MM5030 Series converters boast typical efficiencies of 90 percent. The modules are also said to step a 5V +/-0.5V input down to lower voltages required by core logic, ASICs, […]
International Power Devices (Boston, MA) has introduced the VWx Series of fixed frequency converters designed to yield excellent transient response and predictable...
International Power Devices (Boston, MA) recently introduced the new FES family of dc/dc converters, as well the new VWS and VWB booster family of dc/dc converters. All of the new devices are full-brick converters measuring 4.6 x 2.4 x 0.5. The FES Series, which incorporates synchronous rectification, has a 36 to 75Vdc wide range input, […]
STMicroelectronics Inc. (Lexington, MA) announced it has developed a new range of IGBTs using its PowerMESH technology claimed to offer improved performance compared to conventional IGBT technology. ST has developed families of IGBTs optimized for low-voltage drop, high-switching speed and automotive-ignition applications, respectively.According to ST, the patented PowerMESH technology replaces the traditional cell geometry by […]
Sensitron Semiconductor (Deer Park, NY) announced it has developed a new 200V Silicon Schottky die with nearly ideal forward and reverse characteristics. The PtSi barrier diodes are fabricated by using a unique simultaneous diffusion and reaction technique. A 125 x 125 sq. mil. die typically has Ir=80nA at Tj=25 degrees C and Ir=1.8mA at Tj=175 […]