Diodes Incorporated announced a family of eight NPN and PNP power bipolar transistors in a form factor measuring 3.3mm x 3.3mm. The transistors offer increased power density for applications requiring up to 100V, and they handle up to 3A.
They are suitable for gate-driving power MOSFETs and IGBTs, linear dc-dc step-down regulators, PNP LDO regulation, and load switch circuits, and motor drives.
Targeted at both industrial and consumer markets, the DXTN07xxxxFG (NPN) and DXTP07xxxxFG (PNP) series range from 25V to 100V Vceo. The transistors feature total power dissipation of 2W and are rated up to +175°C operation.
Housed in a PowerDI®3333 surface mount package (3.3mm x 3.3mm x 0.8mm), they occupy 70% less PCB space than the traditional SOT223 (see image above), while they deliver similar power dissipation in a more thermally efficient package. This size difference translates to very similar power dissipation in about one-third the footprint.
Wettable flanks help facilitate the high-speed, automatic optical inspection (AOI) of solder joints, thus eliminating the need for X-ray inspection, resulting in an increase in PCB throughput.
The full range of DXTN07xxxxFG and DXTP07xxxxFG devices are sampling commercially with automotive qualification to be completed by end of Q1 2019. They are priced at $0.19 each in 5000 piece quantities.