Advanced Power Technology Releases New Power MOS 7 500V MOSFETs

Advanced Power Technology (Bend, OR) recently unveiled their new generation of 500V MOSFETs, called Power MOS 7. The new MOSFETs, the company claims, have up to a 10 percent lower total gate charge than the current offering, Power MOS VI, and a 60 percent lower charge than the predecessors, MOS V.

The Power MOS 7 is said to have up to a 30-percent reduction in Rds(on) and an increase in power dissipation, resulting in up to a 20-percent increase in maximum current-carrying capability over the previous versions. The company maintains that the new Power MOS 7's utilization of the metal-on-polysilicon gate structure, combined with lower capacitances, allows for faster switching and lower conduction losses.

The Power MOS 7's features include a 500V breakdown, a 38 mohms to 140 mohms Rds(on) and a 32A to 91A I(D). Four of the new 500V Power MOS 7 products with varying Rds(on)s and I(D)s are currently in production and one of these, with specs of 75Rds(on) and 57I(D), is already available. Both the 140Rds(on), 32I(D) and the 65Rds(on), 66I(D) will become available in the last quarter of this year, with the 38Rds(on), 91I(D) product arriving soon after in the first quarter of 2001. Additional 200V, 500V and 1,000V products will be introduced in early 2001.

The Power MOS 7s are available at 1,000-piece pricing ranging from $10.45 to $62.00, depending on the current rating and package.