PowerPulse Weekly for October 14, 2019

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Power Spotlight
"Benefits of GaN e-mode HEMTs in wireless power transfer"

Presented by

The following paper demonstrates the advantages of gallium nitride (GaN) enhancement mode (e-mode) HEMT devices over MOSFETs in two power amplifier topologies that have been proposed for wireless power... Read More
  • Material Development (Updated October 9, 2019)
  • Bosch Enters Automotive Silicon Carbide Race

    Bosch Semiconductor announced that it will be making silicon carbide (SiC) power semiconductors for automotive applications at its wafer fab in Reutlingen, Germany. According to the announcement, the new SiC…

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