New Industry Products

80V MOSFET Offers 2.35mΩ RDS(on) and FOM of 129 mΩ*nC

January 29, 2020 by Paul Shepard

Vishay Intertechnology, Inc. today introduced a new 80V TrenchFET® Gen IV n-channel power MOSFET in the 6.15mm by 5.15mm PowerPAK® SO-8 single package. Designed to save energy by increasing the efficiency of power conversion topologies and switching circuitry, the Vishay Siliconix SiR680ADP offers best in class on-resistance times gate charge — a key figure of merit (FOM) for MOSFETs used in power conversion applications — of 129 mΩ*nC.

The device released today combines on-resistance down to 2.35mΩ typical at 10V with ultra low gate charge of 55nC and COSS of 614pF. These specifications are fine-tuned to reduce the power losses from switching, channel conduction, and diode conduction, resulting in increased efficiency.

According to Vishay, the MOSFET's on-resistance times gate charge FOM is 12.2% lower than the closest competing product and 22.5% lower than the previous-generation device, making it the most efficient solution available for typical 48V input to 12V output dc-dc converters.

You may also like: 25V, 0.57mΩ MOSFET with Optimized SOA, Drain Current and Gate Charge

The SiR680ADP will serve as a building block in a wide variety of dc-dc and ac-dc conversion applications such as synchronous rectification, primary-side switching, buck-boost converters, resonant tank switching converters, and the OR-ing function in systems such as telecom and data center server power supplies; solar micro-inverters; motor drive control in power tools and industrial equipment; and battery switching in battery management modules.

The MOSFET is 100 % RG- and UIS-tested, RoHS-compliant, and halogen-free.

Samples and production quantities of the SiR680ADP are available now, with lead times of 12 weeks. Pricing for U.S. delivery in 10,000-piece quantities is approximately $0.75 per piece.