New Industry Products

700mA, 42V 16 Channel Radiation-Hardened Driver Circuits

July 15, 2019 by Scott McMahan

Renesas Electronics introduced ISL72814SEH and ISL73814SEH, radiation-hardened high-voltage, high-current, driver circuits. The company fabricated the driver circuits using its proprietary PR40 Silicon-On-Insulator (SOI) process technology to mitigate single-event effects. The driver circuits integrate 16 driver channels that feature a high-voltage (42V), high-current (700mA) open-emitter PNP output stage. (See functional block diagram above).

Applications for the driver circuits include RF waveguide and coaxial switches, relays, line drivers, logic buffers, and lamp drivers.

They also integrate a 4-bit, 16-channel decoder with Enable to further reduce product size. This conveniently allows you to select 1 of 16 available driver channels or disable all channels. The inputs to the decoder are TTL and CMOS compatible, allowing an easy interface to FPGAs and microprocessors.

The ISL7x814SEH devices operate across the military temperature range from -55°C to +125°C and are available in a 28 lead hermetically sealed Ceramic Dual Flatpack (CDFP) package or die.

The devices have a saturation voltage of 1.35V at 500mA, and internal clamping diodes are included for inductive loads.

They feature a wide operating Vcc supply range of 3V to 13.2V.

Able to operate in harsh environments, the driver ICs offer a full military operating temperature range (TA = -55°C to +125°C, and TJ = -55°C to +150°C).

ISL72814SEH and ISL73814SEH have undergone Radiation acceptance testing - ISL72814SEH and ISL73814SEH.

(Click on chart to enlarge)

Features

  • Electrically screened to DLA SMD 5962-18221
  • Integrated 4-bit to 16-channel decoder
  • High Current outputs: 700mA
  • High voltage outputs: 42V
  • Low saturation voltage: 1.35V maximum at 500mA
  • Internal clamping diodes for inductive loads
  • Wide operating Vcc supply range 3V to 13.2V
  • Full military temperature range operation
    • TA = -55°C to +125°C
    • TJ = -55°C to +150°C
  • Radiation acceptance testing - ISL72814SEH
    • HDR (50-300rad(Si)/s): 100krad(Si)
    • LDR (0.01rad(Si)/s): 75krad(Si)
  • Radiation acceptance testing - ISL73814SEH
    • LDR (0.01rad(Si)/s): 75krad(Si)
  • SEE hardness (see SEE report for details)
    • No SEB/SEL LETTH, VCH = 34V: 86MeV•cm2/mg