Littelfuse, Inc. introduced two additions to its expanding line of second-generation, 650V, AEC-Q101-qualified SiC Schottky Diodes. Both series offer a variety of performance advantages over traditional silicon-based devices, including negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175°C. These performance enhancements make them suitable for applications in which improved efficiency, reliability, and thermal management are desired.
Typical applications for the SiC Schottky diodes include EV charging stations, buck/boost stages in dc-dc converters, free-wheeling diodes in inverter stages, high-frequency output rectification, and power factor correction (PFC), switch-mode power supplies, uninterruptible power supplies, solar inverters, industrial motor drives, and EV charging stations.
The company made the product announcement in the Littelfuse booth (#253) at the Applied Power Electronics Conference & Exposition (APEC 2019) in Anaheim, California.
The LSIC2SD065DxxA Series SiC Schottky Diode comes with current ratings of 6A, 10A, or 16A in a TO‑263-2L package; the LSIC2SD065ExxCCA Series SiC Schottky Diode is available with current ratings of 12A, 16A, 20A, or 40A in a TO-247-3L package.
The SiC Schottky Diodes dissipate less energy and can operate at higher junction temperatures than alternative solutions such as standard silicon bipolar power diodes. They also require smaller heat sinks and support a smaller system footprint than silicon solutions. These advantages can result in more compact, energy-efficient systems, and a potentially lower total cost of ownership.
“These additions to our fast-growing 650V SiC Schottky Diode family allow us to offer a broader selection of current ratings and package designs suitable for a wider range of applications,” said Christophe Warin, Littelfuse Silicon Carbide Product Marketing Manager. “These new SiC Schottky Diodes enable a variety of design optimization opportunities, including increased power density, higher efficiency and potentially lower bill of materials costs.”
Key Benefits of New SiC Schottky Diodes
- Available in TO‑263-2L and TO-247-3L packages for greater design flexibility.
- AEC-Q101-qualified diodes exhibit exceptional performance in demanding applications.
- Suitable for high-frequency power switching.
- Safe operation and ease of paralleling for reduced stress on the opposing switch.
- Larger design margin and relaxed thermal management requirements due to 175°C maximum operating junction temperature.
- Positive temperature coefficient for safe operation and ease of paralleling
- Excellent surge capability
- Extremely fast, temperature-independent switching behavior
- Dramatically reduced switching losses compared to Si bipolar