STMicroelectronics introduced the STripFET™ F7 series of low-voltage MOSFETs, ranging from 40V to 120V. The low-voltage MOSFETs feature an enhanced trench-gate structure that lowers device on-state resistance while also reducing internal capacitances and gate charge for faster and more efficient switching.
According to the company, their excellent figure of merit (FoM) and high avalanche ruggedness help simplify designs and reduce equipment size and cost while enhancing reliability in applications including telecom, computing systems, solar inverters, motor control, and automotive applications. Power MOSFETs are belonging to the STPOWER™ family. The above image features an internal schematic diagram.
Features and benefits:
- Among lowest RDS(on) in the market
- Minimal RDS(on) x Qg for increased system efficiency and more compact designs
- Optimized Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
Compared to the previous STripFET F4 and F3 series, the latest F7 series features a much lower on-state resistance per die area. ST says this lower on state resistance per die area translates to a more simplified design for high-power devices with a reduced number of paralleled connections.
AEC-Q101-qualified 40V STripFET F7 MOSFETs
ST has added two new 120A STripFET F7 devices to its portfolio of 40V automotive-grade power MOFSETs. These 40V MOSFETs come in a 0.88mm profile PowerFLAT 5×6 package with wettable flanks. The 2.1mΩ (typical) STL140N4F7AG and 1.68mΩ (typical) STL190N4F7AG combine superior energy efficiency and switching performance with high immunity to false turn-on and very low emitted noise. Typical applications for the 40V automotive qualified MOSFETs include high-current power train, body, or chassis, and safety systems, as well as motor drives such as those in electric power steering (EPS).
The company says it also added new products to the 60V STripFET F7 low-voltage MOSFET series with an improved figure of merit and high avalanche ruggedness to meet strict energy-efficiency specifications and maximize power density.