40V and 60V Dual N-Channel Power MOSFETs in PDFN56 Dual Package

Taiwan Semiconductor Co., Ltd. has expanded its product portfolio with Dual N-Channel Power MOSFETs in a PDFN56 dual package. Samples and products are in stock and available now.

Applications are expected to include BLDC motor control, battery power management, dc-dc converter and secondary synchronous rectification.

Taiwan Semiconductor’s new Dual N-Channel Power MOSFETs in PDFN56 Dual package (TSM110NB04DCR, TSM150NB04DCR, TSM250NB06DCR, TSM300NB06DCR) deliver improved power density. The MOSFETs are available with 40V/60V breakdown voltages 25A to 38A current ratings and an RDSon of 15mΩ to 30mΩ.

The maximum junction temperature is 150°C. Thanks to a low gate charge, fast switching frequencies are possible. All MOSFETS are avalanche and Rg tested. They have a very low on-resistance to minimize conduction losses, meet RoHS requirements and are halogen-free.