GaN Systems announced the availability of the GS-065 low current (3.5A to 11A) transistor line. This new transistor line leverages the company’s technology in 650V enhancement mode GaN HEMTs. The devices are packaged in thermally efficient, low-cost PDFN packages with small 5.0mm x 6.0mm footprint. The specific device ratings are 3.5A, 8A, and 11A, ranging in RDS(on) from 500mΩ to 150mΩ.
The product suite, developed for sub-1kW power applications, targets consumer-level power supply products including AC adapters for gaming and workstation laptops, TV power, LED lighting, wireless power systems, as well as appliance motor drives.
Design benefits of the GaN transistors include low inductance, a 5mm x 6mm package, and three parts in the same footprint.
Unlike some suppliers who offer fully integrated solutions, GaN Systems offers a range of discrete devices to maximize design freedom, accommodate different power levels, and allow power system engineers to keep design control and change parameters to satisfy specific requirements such as EMI emissions.
GaN Systems implements the company’s patented Island Technology® cell layout for high-current die performance & yield of the transistor packages. All three transistor variants, GS-065-004-1-L, GS-065-008-1-L, and the GS-065-011-1-L, are bottom-side cooled transistors, which come in a 5×6 mm PDFN package that offers low junction-to-case thermal resistance.
- Ultra-low FOM Island Technology® die
- Small 5mm ×6mm PDFN package
- Easy gate drive requirements (0V to 6V)
- Transient tolerant gate drive (-20V/+10V )
- Very high switching frequency (> 20MHz)
- Fast and controllable fall and rise times
- Source Sense pad for optimized gate drive
- Reverse current capability
- Zero reverse recovery loss
- RoHS 6 compliant
Evaluation Kit for GaN Transistor Line
With the introduction of GaN Systems’ evaluation kit for these devices, the included EZDriveTM circuit eliminates the need for a discrete driver. According to the company, the result is a low-cost configuration that provides the many benefits of GaN while offering more design flexibility, reducing the number of components, and delivering an easy-to-implement solution. The evaluation kit is adaptable to many power levels, switching frequencies, and LLC/PFC controllers.
GaN power transistors enable improved and new system designs for sleeker and lighter-weight electronic devices, faster-charging systems, and more. For example, using GaN transistors results in AC adapters that are five times smaller and wireless charging solutions that have 50 times more wireless transfer transmit power.
“Combining our reliable GS-065 products with the EZDrive circuit empowers designers to easily take advantage of GaN by helping them achieve the power densities they want and offering the flexibility they need. For appliance customers, these devices offer great efficiency and large-scale SMD manufacturing benefits,” says Larry Spaziani, Vice President of Sales & Marketing at GaN Systems.
GaN Systems is displaying these GaN solutions at the Applied Power Electronics Conference (APEC) in Anaheim, Calif. on March 17-21, 2019.